GLOBALFOUNDRIES and NXP Semiconductor N.V. have co-developed a next-generation embedded non-volatile memory (eNVM). The eNVM technology has been demonstrated and qualified on 300mm prototype wafers using GF’s 40-nanometer (nm) process technology platform.
As the first wafer foundry to develop and qualify 40nm eNVM low-power process technology, GF is expected to begin volume production for the customer at its Singapore facility in 2016
The successful execution of joint development and technology production milestones will enable NXP to further proliferate in a variety of products including near-field-communication and smart card IC markets. “GF is the first foundry that developed this process technology specifically targeting markets that require embedded non-volatile memory products. The successful release to production will enable NXP to further strengthen our market leadership in offering advanced solutions for secure and near field communication market segments,” said Dr. Hai Wang, executive vice president of Technology and Operations at NXP Semiconductor.
NXP will leverage GF’s leading-edge semiconductor manufacturing capability to apply the overall technology to 40nm eNVM that will bring competitive value to end customers.
“GF’s eNVM comprehensive solution includes eFlash, OTP/ MTP, and eFuse to address a full spectrum of semiconductor applications,” said Kevin Yang, director for product management at GF in Singapore. “These are ideal solutions for companies offering products in the secure identification, microcontroller and automotive markets.”
GF is a two-time winner of the NXP annual supplier award for best foundry services.